BCW61C -0.1a , -32v pnp plastic encapsulated transistor elektronische bauelemente 15-jul-2011 rev. a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. 1 base 2 emitter collector 3 rohs compliant product a suffix of -c specifies halogen & lead-free features low current low voltage marking : bc package information absolute maximum ratings (t a =25 c unless otherwise specified) parameter symbol ratings unit collector to base voltage v cbo -32 v collector to emitter voltage v ceo -32 v emitter to base voltage v ebo -5 v collector current - continuous i c -100 ma collector power dissipation p c 0.25 w junction, storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions collector to base breakdown voltage v (br)cbo -32 - - v i c = -10 a, i e =0 collector to emitter breakdown voltage v (br)ceo -32 - - v i c = -1ma, i b =0 emitter to base breakdown voltage v (br)ebo -5 - - v i e = -10 a, i c =0 collector cut-off current i cbo - - -0.02 a v cb =-32v, i e =0 emitter cut-off current i ebo - - -0.02 a v eb = -4v, i c =0 dc current gain h fe (1) 40 - - v ce = -5v, i c = -10 a h fe (2) 250 - 460 v ce = -5v, i c = -2ma h fe (3) 100 - - v ce = -1v, i c = -50ma collector to emitter saturation voltage v ce(sat) -0.06 - -0.25 v i c = -10ma, i b = -0.25ma -0.12 - -0.55 v i c = -50ma, i b = -1.25ma base to emitter saturation voltage v be(sat) -0.6 - -0.85 v i c = -10ma, i b = -0.25ma -0.68 - -1.05 v i c = -50ma, i b = -1.25ma base to emitter voltage v be - -0.55 - v v ce = -5v, i c = -10 a -0.6 - -0.75 v v ce = -5v, i c = -2ma - -0.72 - v v ce = -1v, i c = -50ma transition frequency f t 100 - - mhz v ce = -5v, i c = -10ma, f=100mh z collector capacitance c c - 4.5 - pf v cb = -10v, i e =0, f=1mh z emitter capacitance c e - 11 - pf v eb = -0.5v, i c =0, f=1mh z package mpq leader size sot-23 3k 7 inch sot-23 top view a l c b d g h j f k e 1 2 3 1 2 3 ref. millimeter ref. millimeter min. max. min. max. a 2.80 3.04 g 0.09 0.18 b 2.10 2.55 h 0.45 0.60 c 1.20 1.40 j 0.08 0.177 d 0.89 1.15 k 0.6 ref. e 1.78 2.04 l 0.89 1.02 f 0.30 0.50
BCW61C -0.1a , -32v pnp plastic encapsulated transistor elektronische bauelemente 15-jul-2011 rev. a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
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